公司主要产品涵盖数百种型号的MOSFET和IC芯片,均运用先进的300mm(12寸)和200mm(8寸)工艺技术精心制造,旨在为全球客户提供卓越性能的产品。我们不懈追求技术革新,以满足日益增长的市场需求。
MORE +Part NO.
Channel
ESD Diode (Y/N)
BVDSS(V)
BVGS(V)
VTH(V)
IDS(A)@TA=25℃
RDS(ON)(mΩ)Typ.at VGS=
10V
4.5V
2.5V
Ciss
Package
规格书
RUTM1R3N030M
N
N
30
±20
1.2-2.4
200
1.3
2.2
DFN5060
RUTM2R3N030L
N
N
30
±20
1.0-2.2
180
2.3
3.2
TO-252
RUTM2R2N030M
N
N
30
±20
1.1-2.2
150
2.2
3.3
DFN5060
RUTM2R5N030L
N
N
30
±20
1.1-2.2
100
2.5
3.8
TO-252
RUTM3R3N030L
N
N
30
±20
1.0-2.0
90
3.3
5
TO-252
RUTM3R1N030M
N
N
30
±20
1.0-2.0
90
3.1
5.3
DFN5060
RUTM3R8N030L
N
N
30
±20
1.0-2.0
85
3.8
6
TO-252
RUTM4R4N030L
N
N
30
±20
1.0-2.0
65
4.4
6.7
TO-252
RUTM4RN030M3
N
N
30
±20
1.0-2.0
65
4
7
PDFN3030
RUTM5R8N030L
N
N
30
±20
1.1-2.2
50
5.8
10
TO-252